Second-order optical susceptibility of strained GeSi/Si superlattices
- 15 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6), 2342-2346
- https://doi.org/10.1063/1.337947
Abstract
A strain‐induced ordered phase has been observed recently in the alloy layers of a GeSi/Si strained‐layer superlattice in which the ordered unit cell is noncentrosymmetric. Using the bond‐charge model of Jha and Bloembergen [Phys. Rev. 171, 891 (1968)], the second‐order susceptibility and the linear electro‐optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs.Keywords
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