Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
- 15 January 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (3), 349-351
- https://doi.org/10.1063/1.1537517
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Mg-rich precipitates in the p-type doping of InGaN-based laser diodesApplied Physics Letters, 2002
- Epitaxial Lateral Overgrowth of GaNPhysica Status Solidi (b), 2001
- Epitaxial lateral overgrowth techniques used in group III nitride epitaxyJournal of Physics: Condensed Matter, 2001
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single CrystalsJapanese Journal of Applied Physics, 2001
- Faceted inversion domain boundary in GaN films doped with MgApplied Physics Letters, 2000
- Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaNApplied Physics Letters, 2000
- Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor depositionApplied Physics Letters, 1999
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997