Materials science applications of HREELS in near edge structure analysis and low-energy loss spectroscopy
- 30 September 2003
- journal article
- Published by Elsevier BV in Ultramicroscopy
- Vol. 96 (3-4), 535-546
- https://doi.org/10.1016/s0304-3991(03)00114-1
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Intrinsic electronic structure of threading dislocations in GaNPhysical Review B, 2002
- Direct and indirect transitions in the region of the band gap using electron-energy-loss spectroscopyPhysical Review B, 1998
- Correlation between microstructure and localized band gap of GaN grown on SiCJournal of Applied Physics, 1998
- Highly spatially resolved electron energy‐loss spectroscopy in the bandgap regime of GaNJournal of Microscopy, 1997
- X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and Ga-edge spectra in GaNPhysical Review B, 1997
- Atomic Resolution Electronic Structure in Silicon-Based SemiconductorsJournal of Electron Microscopy, 1996
- ForewordMicroscopy Microanalysis Microstructures, 1991
- Polaronic satellites in x-ray-absorption spectraPhysical Review B, 1990
- Full-potential, linearized augmented plane wave programs for crystalline systemsComputer Physics Communications, 1990
- Electron-Spectrometric Study of Amorphous Germanium and Silicon in the Two-Phonon RegionPhysical Review Letters, 1972