A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
- 16 May 2011
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 22 (25), 254010
- https://doi.org/10.1088/0957-4484/22/25/254010
Abstract
The detailed mechanism of electronic bipolar resistance switching (BRS) in the Pt/TiO(2)/Pt structure was examined. The conduction mechanism analysis showed that the trap-free and trap-mediated space-charge-limited conduction (SCLC) governs the low and high resistance state of BRS, respectively. The SCLC was confirmed by fitting the current-voltage characteristics of low and high resistance states at various temperatures. The BRS behavior originated from the asymmetric potential barrier for electrons escaping from, and trapping into, the trap sites with respect to the bias polarity. This asymmetric potential barrier was formed at the interface between the trap layer and trap-free layer. The detailed parameters such as trap density, and trap layer and trap-free layer thicknesses in the electronic BRS were evaluated. This showed that the degradation in the switching performance could be understood from the decrease and modified distribution of the trap densities in the trap layer.Keywords
This publication has 28 references indexed in Scilit:
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memoryNature Nanotechnology, 2010
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt StackElectrochemical and Solid-State Letters, 2007
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer depositionJournal of Applied Physics, 2005
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000
- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962
- Double Layer Capacities of Single Crystals of Gold in Perchloric Acid SolutionsJournal of the Electrochemical Society, 1962