InGaAs/InP multiple quantum well tunable Bragg reflector
- 2 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (23), 2971-2973
- https://doi.org/10.1063/1.105815
Abstract
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.Keywords
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