Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region
- 1 November 2003
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 37 (11), 1345-1349
- https://doi.org/10.1134/1.1626222
Abstract
A method has been devised for MBE fabrication of p-i-n photodiodes for the spectral range of 1.3–1.5 µm, based on multilayer Ge/Si heterostructures with Ge quantum dots (QDs) on a Si substrate. The sheet density of QDs is 1.2×1012 cm−2, and their lateral size is ∼8 nm. The lowest room-temperature dark current reported hitherto for Ge/Si photodetectors is achieved (2×10−5 A/cm2 at 1 V reverse bias). A quantum efficiency of 3% at 1.3 µm wavelength is obtained.Keywords
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