Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasma
- 1 December 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (11), 4025-4027
- https://doi.org/10.1063/1.337528
Abstract
The preparation conditions for the deposition of hydrogenated amorphous silicon‐carbon alloys (a‐SiC:H) from a glow‐discharge plasma have been systematically scanned by changing the starting‐gas materials as well as the starting gas to hydrogen dilution ratio. A highly photosensitive alloy showing a photoconductivity to dark conductivity ratio of 107 at a band gap of 2.0 eV was prepared under optimized conditions.Keywords
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