Antisite defects in narrow-gap layered chalcogenides of A2VB3VI type
- 31 August 1988
- journal article
- Published by Elsevier BV in Reactivity of Solids
- Vol. 5 (4), 351-359
- https://doi.org/10.1016/0168-7336(88)80033-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystalsJournal of Physics and Chemistry of Solids, 1986
- Inversion of conductivity type in Bi2Te3−xSx crystalsSolid State Communications, 1985
- Properties of Sb2Te3, Single Crystals Doped with Tl Atomsphysica status solidi (a), 1985
- Suppression of antistructural defects in crystals by an increased polarization of bondsPhilosophical Magazine Part B, 1984
- Some Physical Properties and Point Defects in Bi2 Te3−xSx Mixed Crystalsphysica status solidi (a), 1984
- Some physical properties and point defects in Bi2-xInxTe3 mixed crystalsphysica status solidi (a), 1983
- Der Einfluß von überschüssigem antistrukturellem Bi auf die Wärmeleitfähigkeit des Kristallgitters von Bi2Te3, Bi2Te3‐Sb2Te3 und Bi2Te3‐Bi2S3 mit JodbeimischungPhysica Status Solidi (b), 1966
- Evidence for the existence of antistructure defects in bismuth telluride by density measurementsJournal of Physics and Chemistry of Solids, 1965