Comparison of point defects in CuInSe2 and CuGaSe2 single crystals
- 31 March 1999
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 57 (3), 229-237
- https://doi.org/10.1016/s0927-0248(98)00167-6
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Effects of Ga addition to CuInSe2 on its electronic, structural, and defect propertiesApplied Physics Letters, 1998
- A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compoundsJournal of Applied Physics, 1998
- Photoluminescence and electrical properties of Sn-doped CuGaSe2 single crystalsJournal of Applied Physics, 1996
- The Performance of Cu(In, Ga)Se2-Based Solar Cells in Conventional and Concentrator ApplicationsMRS Proceedings, 1996
- The Effect of Copper Vacancies on the Optical Bowing of Chalcopyrite Cu(In,Ga)Se2 AlloysMRS Proceedings, 1991
- Relation between electrical properties and composition in CuInSe2 single crystalsSolar Cells, 1990
- Mechanism of Schottky barrier formation: The role of amphoteric native defectsJournal of Vacuum Science & Technology B, 1987
- On the concentration dependence of the thermal ionisation energy of impurities in InPSemiconductor Science and Technology, 1987
- Transport properties of CuInSe2Solar Cells, 1986
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949