Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
- 4 August 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (5), 052911
- https://doi.org/10.1063/1.2966357
Abstract
We have developed and tested the efficacy of a method for pre-atomic layer deposition (ALD)surface preparation that removes native oxides from the (100) In 0.2 Ga 0.8 As surface and provides a clean starting surface for ALD of ultrathin Al 2 O 3 layers. Successive wet etching by aqueous HCl and N H 4 ( O H ) solutions and in situ pre-ALD thermal desorption of residual elemental As were performed. Photoelectron spectra obtained after ALD of Al 2 O 3 on In 0.2 Ga 0.8 As prepared by this method revealed that the interface was free of In, Ga, and As oxides. The resultant metal-oxide-semiconductor capacitors with Pt electrodes exhibited capacitance-derived equivalent oxide thicknesses as small as 1.8 nm .Keywords
This publication has 22 references indexed in Scilit:
- Indium stability on InGaAs during atomic H surface cleaningApplied Physics Letters, 2008
- Hf O 2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer depositionJournal of Applied Physics, 2008
- In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectricApplied Physics Letters, 2008
- Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectricApplied Physics Letters, 2007
- InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer depositionApplied Physics Letters, 2006
- The distribution of hydroxyl ions at the surface of anodic aluminaSurface and Interface Analysis, 2003
- Surface chemistry evolution during molecular beam epitaxy growth of InGaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Quantitative ARXPS depth profiling characterisation of native oxides grown on In0.53Ga0.47As(100) single crystalsJournal of Electron Spectroscopy and Related Phenomena, 1994
- Anomalous As desorption from InAs(100) 2×4Applied Physics Letters, 1993
- Formation of ‘‘super’’ As-rich GaAs(100) surfaces by high temperature exposure to arsineApplied Physics Letters, 1992