Theoretical linewidth enhancement factor alpha of Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained-quantum-well structures
- 1 February 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (2), 142-145
- https://doi.org/10.1109/68.195984
Abstract
The linewidth enhancement factor, alpha , in the Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained-quantum-well system was calculated and analyzed using density-matrix theory taking into account the effects of band-mixing on both the valence subbands and the transition dipole moments. As a result of numerical calculation, it was found that a reduced linewidth enhancement factor of 1.1 at the gain peak wavelength can be obtained in the tensile strained-quantum-well structure for TM-mode operation. This is due to the higher differential gain and a negligible free carrier plasma effect in the TM-mode compared to that of the TE-mode operating in the compressively strained-quantum-well structure. This calculation agrees with previously reported experimental results.<>Keywords
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