Influence of microstructure on the carrier concentration of Mg-doped GaN films
- 22 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (17), 2734-2736
- https://doi.org/10.1063/1.1413222
Abstract
Room-temperature Hall effect measurements of (0001) Mg-doped GaN films grown on sapphire substrates by metalorganic chemical vapor deposition show a reduction in hole concentration for Mg concentrations greater than 1020 cm−3. A combination of secondary ion mass spectrometry and transmission electron microscopy indicates a steadily increasing Mg incorporation during growth and the formation of inversion domains at these high concentrations. We discuss mechanisms that could give rise to a reduction of the hole concentration at high Mg doping levels.Keywords
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