Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
- 26 September 2011
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 21 (23), 4487-4492
- https://doi.org/10.1002/adfm.201101117
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
- Resistance switching in HfO2 metal-insulator-metal devicesJournal of Applied Physics, 2010
- Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cellsJournal of Applied Physics, 2009
- Switching dynamics in titanium dioxide memristive devicesJournal of Applied Physics, 2009
- Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3Journal of Applied Physics, 2009
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- The missing memristor foundNature, 2008
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000
- Defect structure in perovskite titanatesCurrent Opinion in Solid State and Materials Science, 1996
- Anion deficiency in strontium titanateNature, 1977
- Ion-deficient Phases in Titanium and Vanadium Compounds of the Perovskite Type1,2Journal of the American Chemical Society, 1957