AlGaN Schottky Diodes for Detector Applications in the UV Wavelength Range
- 6 October 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 56 (11), 2833-2839
- https://doi.org/10.1109/ted.2009.2031025
Abstract
In this paper, the performance of AlGaN extreme-ultraviolet (EUV) detectors is optimized by a combination of experimental results, TCAD simulations, and theoretical modeling. Using the verified thin-surface-barrier model, key issues in technology development are identified. A first conclusion is that reducing surface defects at the metal-AlGaN interface is found to reduce diode leakage considerably, hence improving detector sensitivity. Evaluating the benefit of a fingered Schottky contact results in a second conclusion, as a semitransparent fully covering Schottky contact is found to provide a good compromise between EUV sensitivity and reduced leakage. Both conclusions are supported by experimental results.Keywords
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