Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
- 31 July 2011
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (7), 1412-1416
- https://doi.org/10.1016/j.mee.2011.03.069
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistorApplied Physics Letters, 2010
- The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistorApplied Physics Letters, 2010
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistorsApplied Physics Letters, 2010
- Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate DielectricsIEEE Electron Device Letters, 2010
- Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layerApplied Physics Letters, 2010
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistorsApplied Physics Letters, 2009
- Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistorsApplied Physics Letters, 2009
- Light Effects on the Bias Stability of Transparent ZnO Thin Film TransistorsETRI Journal, 2009
- High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopperApplied Physics Letters, 2007
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004