Dislocation velocities and electronic doping in silicon

Abstract

Measurements of velocities of dislocations in silicon as a function of temperature and type of electronic impurity doping using Lang x‐ray topography are reported. Doping with n‐ and p‐type impurities results in an increase of the dislocation velocity and a decrease of the activation energy for both screw and 60° dislocations. The double kink nucleation and migration model of Gerk that takes kink motion to be limited by Auger electron‐hole recombination‐generation processes yields a satisfactory description of the experimental results.