Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
- 20 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (16), 2014-2016
- https://doi.org/10.1063/1.121250
Abstract
InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation.Keywords
This publication has 10 references indexed in Scilit:
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structureApplied Physics Letters, 1997
- Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasersIEEE Journal of Quantum Electronics, 1997
- Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVDMRS Internet Journal of Nitride Semiconductor Research, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992