Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots
Top Cited Papers
Open Access
- 2 February 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 94 (4), 047402
- https://doi.org/10.1103/physrevlett.94.047402
Abstract
We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.Keywords
This publication has 29 references indexed in Scilit:
- Optical readout and initialization of an electron spin in a single quantum dotPhysical Review B, 2003
- Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherencePhysical Review A, 2003
- Optical spin polarization in negatively charged InAs self‐assembled quantum dots under applied electric fieldPhysica Status Solidi (b), 2003
- High-Finesse Optical Quantum Gates for Electron Spins in Artificial MoleculesPhysical Review Letters, 2003
- Optically Driven Spin Memory in-Doped InAs-GaAs Quantum DotsPhysical Review Letters, 2002
- Optical RKKY Interaction between Charged Semiconductor Quantum DotsPhysical Review Letters, 2002
- Zero-field spin quantum beats in charged quantum dotsPhysical Review B, 2002
- Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dotsApplied Physics Letters, 2001
- Quantum Information Processing Using Quantum Dot Spins and Cavity QEDPhysical Review Letters, 1999
- Optical orientation of donor-bound excitons in nanosized InP/InGaP islandsPhysics of the Solid State, 1998