Integration of high-k perovskite capacitor on transparent conductive Zr-doped In2O3 epitaxial thin films
- 1 August 2010
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 518 (21), S22-S25
- https://doi.org/10.1016/j.tsf.2010.03.028
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Buffering effect on physical properties of transparent BaTiO3 capacitors on composite transparent electrodesScripta Materialia, 2009
- Physical properties of low temperature sputtering-deposited zirconium-doped indium oxide films at various oxygen partial pressuresApplied Physics A, 2009
- Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxyApplied Physics Letters, 2008
- Strain-dependent surface evolution and magneto-transport properties of La0.7Sr0.3MnO3 epilayers on SrTiO3 substratesJournal of Crystal Growth, 2007
- Fabrication and Electrical Properties of Strain-Modulated Epitaxial Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] Thin-Film CapacitorsJournal of the Electrochemical Society, 2007
- Quantifying Strain Effects on Physical Properties of La[sub 0.68]Ba[sub 0.32]MnO[sub 3] Epilayers and HeterostructuresJournal of the Electrochemical Society, 2007
- Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconiaJournal of Applied Physics, 2002
- Electric field effect of SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ multilayers grown by all-MBEIEEE Transactions on Applied Superconductivity, 1995
- Structural and electrical characteristics of SrTiO3 thin films for dynamic random access memory applicationsJournal of Applied Physics, 1993
- Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation techniqueThin Solid Films, 1980