Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements
- 1 March 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (5), 2437-2441
- https://doi.org/10.1063/1.364251
Abstract
A method for predicting the long term behavior of semiconductor devices in the low dose-rate ionizing-radiation space environment is presented. The operating conditions related to this environment are briefly reviewed. The new method consists of three major steps. The first step is the determination of the trap characteristics using the experimental recording of an isochronal annealing curve. The second step is the prediction of the isothermal annealing behavior deduced from the experimentally deduced trap characteristics. This approach makes it possible to avoid time-consuming isothermal measurements. As trapping and detrapping processes are independent, combining both processes by convolution, the last step, allows prediction of low dose-rate effects. Up to now, this accelerated characterization method has not been applied to electronic devices. An experimental application of the model to predict the long term behavior of a typical metal oxide semiconductor field effect transistor is given and the results, as well as the validity and the limitations of the model, are discussed.Keywords
This publication has 12 references indexed in Scilit:
- New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)IEEE Transactions on Nuclear Science, 1992
- Hardness assurance for low-dose space applications (MOS devices)IEEE Transactions on Nuclear Science, 1991
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETsIEEE Transactions on Nuclear Science, 1988
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing MeasurementsIEEE Transactions on Nuclear Science, 1972
- Kinetics of Processes Distributed in Activation EnergyPhysical Review B, 1955
- Phosphorescence and electron traps II. The interpretation of long-period phosphorescenceProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1945
- Phosphorescent glasses. Decay of phosphorescenceTransactions of the Faraday Society, 1939