Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
Open Access
- 14 November 2009
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nanoscale Research Letters
- Vol. 5 (2), 360-363
- https://doi.org/10.1007/s11671-009-9488-2
Abstract
We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.Keywords
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