Etched silicon vibrating sensor
- 1 August 1984
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 17 (8), 650-652
- https://doi.org/10.1088/0022-3735/17/8/007
Abstract
The development of a frequency output absolute pressure sensor is described. The sensor element is etched out of single crystal silicon using boron doping to define the shape of the mechanical resonators on one side of a wafer and the diaphragm on the other.Keywords
This publication has 3 references indexed in Scilit:
- Study of the Etch‐Stop Mechanism in SiliconJournal of the Electrochemical Society, 1982
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971
- Ethylene Diamine-Catechol-Water Mixture Shows Preferential Etching of p-n JunctionJournal of the Electrochemical Society, 1969