Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy
- 25 May 2015
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (21)
- https://doi.org/10.1063/1.4921626
Abstract
In this paper, the optical and electrical properties of Mg-doped AlN nanowires are discussed. At room temperature, with the increase of Mg-doping concentration, the Mg-acceptor energy level related optical transition can be clearly measured, which is separated about 0.6 eV from the band-edge transition, consistent with the Mg activation energy in AlN. The electrical conduction measurements indicate an activation energy of 23 meV at 300 K–450 K temperature range, which is significantly smaller than the Mg-ionization energy in AlN, suggesting the p-type conduction being mostly related to hopping conduction. The free hole concentration of AlN:Mg nanowires is estimated to be on the order of 1016 cm−3, or higher.Funding Information
- US Army Research Grant (W911NF-12-1-0477)
- National Science Foundation (ECCS-1402886)
- Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
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