Electroluminescence in oxygen co-doped ZnS:TmF3 and ZnS:Tm, Li thin-film devices
- 3 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (18), 2242-2244
- https://doi.org/10.1063/1.109429
Abstract
The effects of oxygen co‐doping in ZnS:TmF3 and ZnS:Tm, Li thin‐film electroluminescent devices are reported. Active layers are deposited in oxygen atmosphere at substrate temperatures of 200 and 300 °C. It is found that by oxygen codoping the luminance of ZnS:TmF3 and ZnS:Tm, Li devices increases, and that this phenomenon becomes marked in the films prepared at a higher substrate temperature.Keywords
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