Printed, sub‐2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

Abstract
Printed, flexible sub‐2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high‐capacitance ion‐gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical/mechanical stabilities.