Status and trends of power semiconductor device models for circuit simulation
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 13 (3), 452-465
- https://doi.org/10.1109/63.668107
Abstract
The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or long-due breakthroughs is on the other hand not expected in the foreseeable future.Keywords
This publication has 90 references indexed in Scilit:
- Circuit simulation models for MOS-gated power devices: application to the simulation of an electronic lamp ballast circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Parameter extraction for the static and dynamic model of IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high power circuit model for the gate turn off thyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A power bipolar junction transistor model describing static and dynamic behaviorIEEE Transactions on Power Electronics, 1992
- Modelling Power Diodes for Power Electronic Circuits Simulation with SPICE2EPE Journal, 1992
- A circuit simulation model for high-frequency power MOSFETsIEEE Transactions on Power Electronics, 1991
- Diode forward and reverse recovery model for power electronic SPICE simulationsIEEE Transactions on Power Electronics, 1990
- Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided designIEEE Transactions on Power Electronics, 1989
- Three-junction device simulation modelElectronics Letters, 1989