Schottky Barrier Heights and the Continuum of Gap States
- 6 February 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (6), 465-468
- https://doi.org/10.1103/physrevlett.52.465
Abstract
Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is simply related to the bulk semiconductor band structure. In this way "canonical" Schottky barrier heights are calculated for several semiconductors. These are in excellent agreement with experiment for interfaces with a variety of metals.Keywords
This publication has 22 references indexed in Scilit:
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Chemical trends in metal-semiconductor barrier heightsPhysical Review B, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Ionicity and the theory of Schottky barriersPhysical Review B, 1977
- Electronic structure of a metal-semiconductor interfacePhysical Review B, 1976
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- Chemical bonding at metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Theory of Surface StatesPhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947