Van der Waals stacked 2D layered materials for optoelectronics

Abstract
The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.
Funding Information
  • the Natural Science Foundation of SZU (Grant NO: 000050)
  • National Natural Science Foundation of China (Grant NO: 51472164)
  • Ministry of Education (MOE AcRF Tier 1 grant (R-144-000-32, Singapo)