Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model

Abstract
Using a "spatial correlation" model with a Gaussian correlation function we have for the first time quantitatively explained the broadening and asymmetry of the first-order longitudinal-optic phonon Raman spectrum induced by alloy potential fluctuations. The systems studied were the representative alloy semiconductors Ga1xAlxAs/GaAs and Ga0.47 In0.53As/InP. This analysis provides important insights into the microscopic nature of the alloy potential fluctuations.