Picosecond laser-induced melting and resolidification morphology on Si
- 15 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (12), 864-866
- https://doi.org/10.1063/1.90703
Abstract
Ultrafast melting and resolidification on the surface of a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm. Optical microscopy and electron diffraction revealed the formation of amorphous silicon. Details of surface morphology are sensitive functions of pulse intensity, energy, wavelength, and crystallographic orientation.Keywords
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