An upper limit on the lateral vacancy diffusion length in diamond
- 30 April 2012
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 24, 6-10
- https://doi.org/10.1016/j.diamond.2012.02.009
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Top-down pathways to devices with few and single atoms placed to high precisionNew Journal of Physics, 2010
- Long-range migration of intrinsic defects during irradiation or implantationJournal of Physics: Condensed Matter, 2009
- Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealingPhysical Review B, 2009
- Scanning Transmission Ion Microscopy of Nanoscale AperturesJournal of the Korean Physical Society, 2008
- Diamond integrated quantum photonicsMaterials Today, 2008
- Photoluminescence and positron annihilation measurements of nitrogen doped CVD diamondDiamond and Related Materials, 2003
- Formation and characterization of graphitized layers in ion-implanted diamondDiamond and Related Materials, 1999
- Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamondJournal of Applied Physics, 1995
- Two-laser spectral hole burning in a colour centre in diamondJournal of Luminescence, 1987
- Persistent spectral hole burning of colour centres in diamondJournal of Physics C: Solid State Physics, 1984