Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons
- 11 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (2), 187-190
- https://doi.org/10.1103/physrevlett.61.187
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- SiO2/Si interface probed with a variable-energy positron beamApplied Physics Letters, 1987
- Hydrogen-implantation-induced damage in siliconPhysical Review B, 1987
- Profiling multilayer structures with monoenergetic positronsPhysical Review B, 1987
- Characterization of MBE grown Si/GexSi1−x strained layer superlatticesJournal of Crystal Growth, 1987
- Investigation of surface defects on Ni(110) with a low-energy positron beamPhysical Review B, 1987
- The Growth of Novel Silicon MaterialsPhysics Today, 1986
- Variable-energy positron-beam studies of Ni implanted with HePhysical Review B, 1986
- UV ozone cleaning of silicon substrates in silicon molecular beam epitaxyApplied Physics Letters, 1984
- Observation of defects associated with the Cu/W(110) interface as studied with variable-energy positronsPhysical Review B, 1983
- Slow-positron apparatus for surface studiesReview of Scientific Instruments, 1980