A Facile Reaction for the Preparation of BN Nanospheres
- 1 January 2010
- journal article
- Published by Trans Tech Publications, Ltd. in Advanced Materials Research
Abstract
In this paper we describe the synthesis of nanocrystalline boron nitride (BN) with a hollow morphology by the reaction of NH4BF4 and NaNH2 at 500 oC for 24h. Characterized by XRD, FTIR, XPS, TEM, and EDXA spectra, the composition and morphology of the products were confirmed. The possible formation mechanism was also discussed.Keywords
This publication has 25 references indexed in Scilit:
- Characterization of high surface area hexagonal boron nitride by in situ electrical conductivityDiamond and Related Materials, 2009
- A comparative study on the tribological behaviour of hexagonal boron nitride (h-BN) as lubricating micro-particles—An additive in porous sliding bearings for a car clutchWear, 2009
- High‐Thermal‐Conductivity AlN Filler for Polymer/Ceramics CompositesJournal of the American Ceramic Society, 2009
- High-temperature friction of refractory compoundsPowder Metallurgy and Metal Ceramics, 2008
- Growth and characterization of III-N bulk crystalsJournal of Materials Science: Materials in Electronics, 2007
- The optical absorption and photoconductivity spectra of hexagonal boron nitride single crystalsPhysica Status Solidi (a), 2005
- Humidity effects on the electrical properties of hexagonal boron nitride thin filmsThin Solid Films, 2005
- Compression and thermal expansion of hexagonal graphite-like boron nitride up to 7 GPa and 1800 KJournal of Physics and Chemistry of Solids, 1997
- Thermal Shock Resistance of .BETA.'-Sialon-BN Composites Prepared by Pressureless Sintering and Reaction Bonding.Journal of the Society of Materials Science, Japan, 1996
- Characterization of laser-ablated boron nitride thin films on siliconThin Solid Films, 1994