Polarity control of GaN grown on sapphire substrate by RF-MBE
- 14 December 2001
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 237-239, 1003-1007
- https://doi.org/10.1016/s0022-0248(01)02116-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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