Characterisation of Schottky Diode Performance by Numerical Simulation Coupled with Harmonic Balance
- 1 October 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 27th European Microwave Conference, 1997
Abstract
The electrical and RF performance characteristics of submillimetre-wave Schottky diodes are investigated using an accurate physical model which combines drift-diffusion current transport with thermionic and thermionicfield emission currents imposed at the Schottky contact. The model includes self-consistently image force effect, tunneling transport, and current dependent recombination velocity at the Schottky contact. This physical simulator has been coupled to a harmonic balance simulator as a non-linear element. The integrated device-circuit simulator has allowed to study in detail the limiting factors of varactor operation. The contribution of large-signal capacitance excitation is discussed. The influence of external loads at different harmonics, bias and power level is also analysed.Keywords
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