Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition
- 1 June 1991
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science
- Vol. 26 (12), 3271-3274
- https://doi.org/10.1007/bf01124673
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Amorphous-Semiconductor DevicesScientific American, 1977
- Studies of amorphous GeSeTe alloys (I): Preparation and calorimetric observationsJournal of Non-Crystalline Solids, 1976
- Differential thermal analysis, structure and switching of thin chalcogenide filmsJournal of Materials Science, 1972
- Reversible structural transformations in amorphous semiconductors for memory and logicMetallurgical Transactions, 1971