Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
- 1 February 2016
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 108 (5), 052105
- https://doi.org/10.1063/1.4941429
Abstract
Deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS) measurements performed on Ni/β-Ga2O3 Schottky diodes fabricated on unintentionally doped (010) substrates prepared by edge-defined film-fed growth revealed a rich spectrum of defect states throughout the 4.84 eV bandgap of β-Ga2O3. Five distinct defect states were detected at EC − 0.62 eV, 0.82 eV, 1.00 eV, 2.16 eV, and 4.40 eV. The EC − 0.82 eV and 4.40 eV levels are dominant, with concentrations on the order of 1016 cm−3. The three DLTS-detected traps at EC − 0.62 eV, 0.82 eV, and 1.00 eV are similar to traps reported in Czochralski-grown β-Ga2O3, [K. Irmscher et al., J. Appl. Phys. 110, 063720 (2011)], suggesting possibly common sources. The DLOS-detected states at EC − 2.16 eV and 4.40 eV exhibit significant lattice relaxation effects in their optical transitions associated with strongly bound defects. As a consequence of this study, the Ni/β-Ga2O3 (010) Schottky barrier height was determined to be 1.55 eV, with good consistency achieved between different characterization techniques.Keywords
Funding Information
- Air Force Office of Scientific Research (FA9550-14-1-0012)
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