Surface interaction of H2S, SO2, and SO3 on fullerene-like gallium nitride (GaN) nanostructure semiconductor
- 1 October 2017
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 265, 6-11
- https://doi.org/10.1016/j.ssc.2017.07.018
Abstract
No abstract availableFunding Information
- Iran Nanotechnology Initiative Council, Iran
This publication has 37 references indexed in Scilit:
- Investigation on structural, electronic, and magnetic properties of Mn-doped Ga12N12 clustersJournal of Materials Science, 2013
- Cluster-assembled materials based on M12N12 (M = Al, Ga) fullerene-like clustersPhysical Chemistry Chemical Physics, 2011
- Adsorption of sulfur dioxide on hematite and goethite particle surfacesPhysical Chemistry Chemical Physics, 2007
- Formation and atomic structure of B12N12nanocage clusters studied by mass spectrometry and cluster calculationScience and Technology of Advanced Materials, 2004
- Single-crystal gallium nitride nanotubesNature, 2003
- Structure and Stability of Boron Nitrides: Isomers of B12N12The Journal of Physical Chemistry A, 2000
- Stability and electronic structure of GaN nanotubes from density-functional calculationsPhysical Review B, 1999
- Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlationPhysical Review B, 1992
- Tables of bond lengths determined by X-ray and neutron diffraction. Part 1. Bond lengths in organic compoundsJournal of the Chemical Society, Perkin Transactions 2, 1987
- C60: BuckminsterfullereneNature, 1985