A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect
- 1 March 2015
- journal article
- Published by IOP Publishing in Journal of Semiconductors
- Vol. 36 (3), 34007
- https://doi.org/10.1088/1674-4926/36/3/034007
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Ultralow Specific On-Resistance Superjunction Vertical DMOS With High-$K$ Dielectric PillarIEEE Electron Device Letters, 2012
- Analysis and Fabrication of an LDMOS With High-Permittivity DielectricIEEE Electron Device Letters, 2011
- New Superjunction LDMOS With $N$-Type Charges' Compensation LayerIEEE Electron Device Letters, 2009
- High-Voltage SOI SJ-LDMOS With a Nondepletion Compensation LayerIEEE Electron Device Letters, 2008
- Super-junction LDMOST on a silicon-on-sapphire substrateIEEE Transactions on Electron Devices, 2003
- Optimization of RESURF LDMOS transistors: an analytical approachIEEE Transactions on Electron Devices, 1990