Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
- 9 April 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (15), 152116
- https://doi.org/10.1063/1.4703938
Abstract
In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.Keywords
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