High-voltage bulk photovoltaic effect and the photorefractive process in LiNbO3
- 15 August 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (4), 233-235
- https://doi.org/10.1063/1.1655453
Abstract
Photocurrents in doped LiNbO3 crystals are shown to be due to a bulk photovoltaic effect with saturation voltages in excess of 1000 V (∼105 V/cm). This effect accounts for the light‐induced index changes in LiNbO3. An explanation of the photovoltaic effect, based on the asymmetry of the lattice, is proposed.Keywords
This publication has 11 references indexed in Scilit:
- Multiphoton photorefractive processes for optical storage in LiNbO3Applied Physics Letters, 1974
- Electronic structure and optical index damage of iron-doped lithium niobateThe Journal of Chemical Physics, 1973
- Thermally fixed holograms in linbo3Ferroelectrics, 1972
- Optical Index Damage in LiNbO3 and Other Pyroelectric InsulatorsJournal of Applied Physics, 1970
- Optically Induced Change of Refractive Indices in LiNbO3 and LiTaO3Journal of Applied Physics, 1969
- Oxygen-Octahedra Ferroelectrics. I. Theory of Electro-optical and Nonlinear optical EffectsJournal of Applied Physics, 1969
- HOLOGRAPHIC STORAGE IN LITHIUM NIOBATEApplied Physics Letters, 1968
- RELATIONSHIP BETWEEN LINEAR AND QUADRATIC ELECTRO-OPTIC COEFFICIENTS IN LiNbO3, LiTaO3, AND OTHER OXYGEN-OCTAHEDRA FERROELECTRICS BASED ON DIRECT MEASUREMENT OF SPONTANEOUS POLARIZATIONApplied Physics Letters, 1968
- Photovoltages Larger than the Band Gap in Zinc Sulfide CrystalsPhysical Review B, 1958
- Surface Space-Charge Layers in Barium TitanatePhysical Review B, 1956