Near-field control and imaging of free charge carrier variations in GaN nanowires
- 15 February 2016
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 108 (7)
- https://doi.org/10.1063/1.4942107
Abstract
Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronicKeywords
This publication has 36 references indexed in Scilit:
- Nanomaterials in transistors: From high-performance to thin-film applicationsScience, 2015
- On-Chip Optical Interconnects Made with Gallium Nitride NanowiresNano Letters, 2013
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Design Principles for Photovoltaic Devices Based on Si Nanowires with Axial or Radial p–n JunctionsNano Letters, 2012
- Nanowire Solar CellsAnnual Review of Materials Research, 2011
- Plasmon lasers at deep subwavelength scaleNature, 2009
- Toward Nanowire ElectronicsIEEE Transactions on Electron Devices, 2008
- Spontaneously grown GaN and AlGaN nanowiresJournal of Crystal Growth, 2006
- Controlled Growth and Structures of Molecular-Scale Silicon NanowiresNano Letters, 2004
- Nanometer-sized semiconductor clusters: materials synthesis, quantum size effects, and photophysical propertiesThe Journal of Physical Chemistry, 1991