Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAs
- 9 October 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 29 (15), 1001-1004
- https://doi.org/10.1103/physrevlett.29.1001
Abstract
Interference effects, due to quenching of the exciton in the depletion layer of a GaAs-Au Schottky barrier at ∼ 1.8°K, are reported for the first time. The results bear out the strong dependence of the exciton reflectance line shape on the surface conditions (through local electric fields). It is shown that the reflecting boundary for the exciton polariton occurs at some depth from the surface, with known potential barrier, allowing quantitative investigation of spatial dispersion.
Keywords
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