Thermally assisted hole tunneling at theAu−Si3N4interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

Abstract

Thermally assisted tunneling of holes at the ${\mathrm{A}\mathrm{u}-\mathrm{S}\mathrm{i}}_3{\mathrm{N}}_4$ interface was experimentally observed. The hole barrier of $1.6\pm 0.2\mathrm{eV}$ and the effective masses for the hole and electron tunneling into silicon nitride have been determined. A revised energy-band diagram of the metal-nitride-oxide-semiconductor structure is constructed.