Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology
- 1 July 2000
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 369 (1-2), 199-202
- https://doi.org/10.1016/s0040-6090(00)00806-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygenApplied Physics Letters, 1998
- Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheatingIEEE Transactions on Electron Devices, 1998