Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
- 4 June 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (24), 245304
- https://doi.org/10.1103/physrevb.77.245304
Abstract
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.Keywords
Other Versions
This publication has 27 references indexed in Scilit:
- Spin-dependent photocurrent induced by Rashba-type spin splitting inheterostructuresPhysical Review B, 2007
- Large Bychkov-Rashba spin-orbit coupling in high-mobilityheterostructuresPhysical Review B, 2006
- Spin orientation of a two-dimensional electron gas by a high-frequency electric fieldPhysical Review B, 2006
- Coordinate shift in the semiclassical Boltzmann equation and the anomalous Hall effectPhysical Review B, 2006
- Full-zone k⋅p method of band structure calculation for wurtzite semiconductorsJournal of Applied Physics, 2004
- Spin splitting in symmetrical SiGe quantum wellsPhysical Review B, 2004
- Electron spin splitting in polarization-doped group-III nitridesPhysical Review B, 2003
- Classical generalization of the Drude formula for the optical conductivityPhysical Review B, 2001
- Generation and Complete Electric-Field Characterization of Intense Ultrashort Tunable Far-Infrared Laser PulsesPhysical Review Letters, 1999
- Electronic and optical properties of unstrained and strained wurtzite GaNPhysical Review B, 1996