Integrated bulk∕SOI APD sensor: bulk substrate inspection with Geiger-mode avalanche photodiodes
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (9), 735-736
- https://doi.org/10.1049/el:20030490
Abstract
A rapid assessment of bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer using both plasma and wet etch is compared with standard p-epi silicon by comparing the performance of avalanche photodiodes (APD) operated in Geiger-mode. Plasma etching of the buried oxide shows lower dark counts than wet etched or standard p-epi substrates.Keywords
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