Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
- 11 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24), 2419-2421
- https://doi.org/10.1063/1.102896
Abstract
Epitaxial liftoff is an alternative to lattice-mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin-film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self-bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin-film atomic lattices can be simultaneously imaged, showing only a thin (20–100 Å) amorphous layer in between.Keywords
This publication has 13 references indexed in Scilit:
- Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuitsElectronics Letters, 1990
- Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substratesJournal of Applied Physics, 1989
- Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW materialElectronics Letters, 1989
- Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substratesElectronics Letters, 1989
- High-speed InP/GaInAs photodiode on sapphire substrateElectronics Letters, 1989
- MESFET lift-off from GaAs substrate to glass hostElectronics Letters, 1989
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Wetting Angles and Surface Tension in the Crystallization of Thin Liquid FilmsJournal of the Electrochemical Society, 1984