Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry
- 17 November 2014
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 105 (20)
- https://doi.org/10.1063/1.4901836
Abstract
Spectroscopic ellipsometry was used to characterize the complex refractive index of chemical-vapor-deposited monolayer transition metal dichalcogenides (TMDs). The extraordinary large value of the refractive index in the visible frequency range is obtained. The absorption response shows a strong correlation between the magnitude of the exciton binding energy and band gap energy. Together with the observed giant spin-orbit splitting, these findings advance the fundamental understanding of their novel electronic structures and the development of monolayer TMDs-based optoelectronic and spintronic devices.Keywords
This publication has 37 references indexed in Scilit:
- Electroluminescence in Single Layer MoS2Nano Letters, 2013
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheetsNature Chemistry, 2013
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2ACS Nano, 2012
- Extraordinary Room-Temperature Photoluminescence in Triangular WS2 MonolayersNano Letters, 2012
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2Nano Letters, 2012
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2ACS Nano, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010
- Emerging Photoluminescence in Monolayer MoS2Nano Letters, 2010