Improvements in Stability and Performance of N,N′‐Dialkyl Perylene Diimide‐Based n‐Type Thin‐Film Transistors
- 21 April 2009
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 21 (16), 1631-1635
- https://doi.org/10.1002/adma.200802934
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- High‐Performance Solution‐Deposited n‐Channel Organic Transistors and their Complementary CircuitsAdvanced Materials, 2007
- Ultralow-power organic complementary circuitsNature, 2007
- Patterning organic single-crystal transistor arraysNature, 2006
- High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatmentsApplied Physics Letters, 2006
- High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillatorsApplied Physics Letters, 2006
- High‐Mobility Air‐Stable n‐Type Semiconductors with Processing Versatility: Dicyanoperylene‐3,4:9,10‐bis(dicarboximides)Angewandte Chemie-International Edition, 2004
- Organic Thin Film Transistors Based onN-Alkyl Perylene Diimides: Charge Transport Kinetics as a Function of Gate Voltage and TemperatureThe Journal of Physical Chemistry B, 2004
- N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivativeApplied Physics Letters, 2002
- Organic Thin Film Transistors for Large Area ElectronicsAdvanced Materials, 2002
- A soluble and air-stable organic semiconductor with high electron mobilityNature, 2000